I n s i t u investigation of transport in semiconductors: A contactless approach

Abstract

We present a spatially resolved contactless method for the study of electronic and thermal transport in semiconductors. The technique employs the deflection of a probe beam propagating through the material to measure thermal and electronic diffusivities, carrier lifetime, and surface recombination. This deflection results from both the thermally and electronically induced changes in the local index of refraction of the semiconductor.