Effect of the capture coefficient in deep-level transient spectroscopy measurements
- 1 June 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (11), 5055-5061
- https://doi.org/10.1063/1.338329
Abstract
Underlying the conventional deep-level transient spectroscopy (DLTS) method is the assumption of an exponential capacitance transient to the equilibrium state as a result of the thermal emission rate of free carriers from a filled trap energy level. This exponential capacitance transient may prove to be a good approximation for specific cases but, in general, the transient capacitance decay to the equilibrium state following a capture pulse is nonexponential. In this study nonexponential capacitance transients are shown to be encouraged by the presence of the free-carrier tail which spills over abundant free mobile carriers into the space-charge region thus negating the abrupt junction depletion approximation and favoring both capture and emission of carriers. An upper limit for this effect is obtained here by assuming the carrier concentration in the relevant part of the space-charge region which one has in the neutral region. This reduces the thermal emission rate by several orders of magnitude from what one would find with the assumption of pure exponential transient and neglecting spillover, as in the normal DLTS method. A particular case is considered, where both capture and thermal emission processes occur simultaneously in the Shockley–Read–Hall kinetic equation for a single-trap energy level. The variation of carrier occupancy with respect to time leads to a nonexponential capacitance transient decay to the equilibrium state.Keywords
This publication has 22 references indexed in Scilit:
- Electrical and optical properties of the neutral nickel acceptor in gallium phosphideJournal of Physics C: Solid State Physics, 1984
- Determination of trapped charge emission rates from nonexponential capacitance transients due to high trap densities in semiconductorsJournal of Applied Physics, 1984
- Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloysJournal of Applied Physics, 1983
- Analysis of nonexponential transient capacitance in silicon diodes heavily doped with platinumJournal of Applied Physics, 1983
- A novel method to detect nonexponential transients in deep level transient spectroscopyJournal of Applied Physics, 1982
- Fundamentals of junction measurements in the study of deep energy levels in semiconductorsJournal of Physics E: Scientific Instruments, 1981
- A steady-state constant capacitance method for the characterization of deep energy levels in semiconductorsJournal of Applied Physics, 1980
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Theory of the decay of excess carrier concentrations in semiconductorsJournal of Physics and Chemistry of Solids, 1965