Hydrogen in Si: Diffusion and shallow impurity deactivation
- 30 September 1987
- journal article
- Published by Elsevier in Physica B+C
- Vol. 146 (1-2), 19-29
- https://doi.org/10.1016/0378-4363(87)90048-9
Abstract
No abstract availableKeywords
This publication has 52 references indexed in Scilit:
- Hydrogen injection and neutralization of boron acceptors in silicon boiled in waterApplied Physics Letters, 1986
- Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal siliconPhysical Review Letters, 1986
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- Electric field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal siliconApplied Physics Letters, 1985
- Compensation of p-type cast polycrystalline silicon by hydrogen ion implantation at 300 °CApplied Physics Letters, 1985
- Near-surface microstructural modifications in low energy hydrogen ion bombarded siliconJournal of Vacuum Science & Technology A, 1985
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983
- Generation-annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn-around phenomena on oxidized silicon during avalanche electron injectionJournal of Applied Physics, 1983
- Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized siliconJournal of Applied Physics, 1983
- Hydrogen ion implantation profiles as determined by SIMSNuclear Instruments and Methods, 1978