RESONANT AND ROUND-TRIP GAIN FOR ACOUSTOELECTRIC DOMAINS IN n-InSb
- 15 July 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (2), 60-62
- https://doi.org/10.1063/1.1652507
Abstract
Resonant and round‐trip acoustoelectric gain are attainable in the high‐mobility, piezoelectric semiconductor n‐InSb, upon application of transverse magnetic fields. These features are demonstrated in the context of acoustoelectric domain formation and acoustoelectric instabilities. The elucidation of the basic features is greatly simplified by the use of constant‐current pulses, which eliminate oscillatory effects.Keywords
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