Optical Thickness Measurement of Thin Transparent Films on Silicon
- 1 December 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (12), 3804-3807
- https://doi.org/10.1063/1.1713951
Abstract
The thickness of thin transparent films on reflecting substrates is determined by an interference technique using a spectrophotometer. The method is rapid, routine, nondestructive, and precise to ±100 Å for layers over 1000 Å thick. An empirical calibration is presented for the case of oxide layers on silicon, avoiding errors due to the dispersion of the oxide.Keywords
This publication has 3 references indexed in Scilit:
- Nondestructive Determination of Thickness and Refractive Index of Transparent FilmsIBM Journal of Research and Development, 1964
- An Investigation of the Optical Properties and the Growth of Oxide Films on SiliconJournal of the Electrochemical Society, 1963
- Interference Method for Measuring the Thickness of Epitaxially Grown FilmsJournal of Applied Physics, 1961