Tunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain
- 15 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10), 1105-1107
- https://doi.org/10.1063/1.96344
Abstract
Tunneling hot‐electron transfer amplifier (THETA) devices, based on GaAs‐AlGaAs heterojunctions, were fabricated and tested. Hot‐electron transfer (α) through a 1100‐Å base in excess of 70% was found at 4.2 K. This resulted in a corresponding current gain ( β) in a common emitter configuration of about 2.3. In the temperature range of 4.2–80 K and under constant biasing conditions, α was nearly temperature independent. Electron energy distributions for motion normal to the layers and electron total energy loss while traversing the device were estimated. Typical widths of the energy distributions were less than 200 meV, and both widths and energy peak positions were only slightly dependent on temperature and initial injection energy.Keywords
This publication has 11 references indexed in Scilit:
- Energy band discontinuities in heterojunctions measured by internal photoemissionApplied Physics Letters, 1985
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- Hot-Electron Spectroscopy of GaAsPhysical Review Letters, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Hot electron spectroscopyElectronics Letters, 1984
- Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAsJournal of Applied Physics, 1983
- Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infraredSolid-State Electronics, 1981
- Fully ion-implanted GaAs ICs using normally-off JFETsElectronics Letters, 1981
- Hot-electron camel transistorIEE Journal on Solidstate and Electron Devices, 1979
- Operation of Tunnel-Emission DevicesJournal of Applied Physics, 1961