CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICON
- 1 April 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (7), 225-226
- https://doi.org/10.1063/1.1652789
Abstract
We have measured the fractional change in the optical reflectivity of silicon in the 1.8–2.2 eV photon energy band as a function of 40‐keV antimony ion dose (1011–1015 Sb/cm2 at various implant temperatures (− 160–405°C). Approximate agreement is found between the change of reflectivity and previous measurements of lattice disorder as determined by backscattering of 1‐MeV He ions.Keywords
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