High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
Top Cited Papers
- 20 August 2012
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 24 (43), 5832-5836
- https://doi.org/10.1002/adma.201201909
Abstract
Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V−1s−1), near-ideal subthreshold swings (∼70 mV decade−1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.Keywords
This publication has 20 references indexed in Scilit:
- Hysteresis in Single-Layer MoS2 Field Effect TransistorsACS Nano, 2012
- Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si SubstratesAdvanced Functional Materials, 2012
- Single-Layer MoS2PhototransistorsACS Nano, 2011
- A highly sensitive and low‐noise IR photosensor based on a‐SiGe as a sensing and noise filter: Toward large‐sized touch‐screen LCD panelsJournal of the Society for Information Display, 2011
- How Good Can Monolayer MoS2 Transistors Be?Nano Letters, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nmScience, 2009
- Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenidesJournal of Applied Physics, 2007
- High-mobility field-effect transistors based on transition metal dichalcogenidesApplied Physics Letters, 2004
- Ballistic metal-oxide-semiconductor field effect transistorJournal of Applied Physics, 1994