Intersubband infrared absorption in GexSi1−x/Si superlattice by photocurrent measurement
- 2 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (14), 1342-1344
- https://doi.org/10.1063/1.102508
Abstract
The intersubband infrared absorption of holes in a GexSi1−x /Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first to the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.Keywords
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