Cyclotron resonance and hall experiments with high-purity epitaxial GaAs
- 1 September 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (17), 1275-1279
- https://doi.org/10.1016/0038-1098(69)90193-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Impact ionization breakdown of n-type epitaxial GaAs at liquid helium temperaturesSolid-State Electronics, 1968
- Thermoelectric Cyclotron Resonance in GermaniumJournal of Applied Physics, 1968
- Interband magneto-optical absorption in gallium arsenideJournal of Physics and Chemistry of Solids, 1968
- Shallow donor levels and high mobility in epitaxial gallium arsenideSolid State Communications, 1966
- Infrared Cyclotron Resonance Absorption in-Type GaAsPhysical Review B, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Cross modulation of d.c. resistance by microwave cyclotron resonanceJournal of Physics and Chemistry of Solids, 1959
- Plasma Resonance in Crystals: Observations and TheoryPhysical Review B, 1955