Shallow donor levels and high mobility in epitaxial gallium arsenide
- 30 April 1966
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 4 (4), 181-184
- https://doi.org/10.1016/0038-1098(66)90007-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- The theory of impurity conductionAdvances in Physics, 1961
- Properties of p-Type GaAs Prepared by Copper DiffusionJournal of Applied Physics, 1960
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949