InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy
- 6 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (14), 859-861
- https://doi.org/10.1063/1.97517
Abstract
Preparation and performance of separate avalanche and multiplication superlattice photodiodes are reported. The absorbing region of these devices consists of up to 100 InGaAs quantum wells separated by InP barriers grown by gas source molecular beam epitaxy. The well size varies from 50 to 20 Å with very well-resolved exciton structures visible at room temperature. With the p-n junction displaced into the InP layer, leakage currents as low as 0.1 nA are obtained at unity gain bias of 20 V. dc avalanche gain of up to 280 and rf gain of 20 are observed at a bias of 38 V.Keywords
This publication has 19 references indexed in Scilit:
- New high-speed long-wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodesApplied Physics Letters, 1985
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPEElectronics Letters, 1985
- Gas source molecular beam epitaxy of GaxIn1−xPyAs1−yJournal of Applied Physics, 1984
- GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxyApplied Physics Letters, 1984
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regionsElectronics Letters, 1983
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980