Electroluminescence of heavily-doped heterojunctions pAlxGa1-xAs-nGaAs
- 1 January 1970
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 1-2, 869-884
- https://doi.org/10.1016/0022-2313(70)90099-2
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- Injection Mechanisms in GaAs Diffused Electroluminescent JunctionsPhysical Review B, 1965
- Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]IBM Journal of Research and Development, 1960
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949