Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping
- 13 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11), 981-983
- https://doi.org/10.1063/1.100755
Abstract
Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have population inversion sufficient for lasing. The possibility of lasing at the higher temperature is briefly discussed.Keywords
This publication has 13 references indexed in Scilit:
- Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94 Films Grown by Metal-Organic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Stability and interdiffusion at MOCVD grown ZnSe/GaAs interfacesJournal of Crystal Growth, 1988
- Polarization-dependent optical gain and absorption spectra of (Cd,Mn)Te and (Zn,Mn)Se multiple quantum well structuresApplied Physics Letters, 1987
- Electron beam pumped lasing in ZnSe grown by molecular beam epitaxyApplied Physics Letters, 1987
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Electron beam pumped II–VI lasersJournal of Crystal Growth, 1985
- Visible Stimulated Emission in Ternary Chalcopyrite Sulfides and SelenidesApplied Physics Letters, 1971