High Mobility Poly-Si Thin Film Transistors Using Solid Phase Crystallized a-Si Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A), L2380
- https://doi.org/10.1143/jjap.29.l2380
Abstract
Thin film transistors (TFTs) have been developed on quartz substrates by using large-grain-size polycrystalline silicon (poly-Si) films. The poly-Si films were fabricated by solid phase crystallization (SPC) of amorphous silicon (a-Si) deposited by plasma-enhanced chemical vapor deposition (PECVD). We have found that the dehydrogenation process is strongly correlated with the SPC of the a-Si, especially in nucleus generation time. The n-channel TFT mobility of 158 cm2/(V ·s) is obtained by using the SPC of the PECVD a-Si.Keywords
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