A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques
- 1 February 1969
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 19 (158), 403-413
- https://doi.org/10.1080/14786436908217796
Abstract
The study of nucleation kinetics in the autoepitaxial growth of silicon from a molecular beam of silane on (111) oriented substrates reported in Paper III (Joyce, Bradley and Booker 1967) has been extended to (100) substrates. Measurements of the dependence of the saturation number density of growth centres on time, substrate temperature and beam intensity have been made, and the spatial distribution of growth centres determined and compared with a completely random distribution. Analysis of these results in terms of the theory developed in Paper III shows good qualitative agreement, and physically reasonable values for the number of atoms in the smallest stable nucleus and the activation energy of surface diffusion have been deduced. However, complete quantitative agreement has not yet been obtained between theoretical and experimental results.Keywords
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