Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (5), 200-202
- https://doi.org/10.1109/55.31720
Abstract
An investigation of the effect of surface recombination and emitter-base-contact spacing on the DC current-gain of AlGaAs/GaAs heterojunction bipolar transistor (HBT) using thin AlGaAs emitter structures is discussed. The selectively-etched, thin-AlGaAs-emitter layer has been used to prevent an exposed extrinsic base region, which has previously limited current gain because of high surface recombination. It is found that a factor of approximately 50 improvement in the current gain can be achieved by proper surface passivation and emitter-base-contact spacing.Keywords
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