Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTs
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7), 857-862
- https://doi.org/10.1109/16.3336
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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