Fully silicided NiSi and germanided NiGe dual gates on SiO/sub 2//Si and Al/sub 2/O/sub 3//Ge-on-insulator MOSFETs
- 22 March 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 13.4.1-13.4.4
- https://doi.org/10.1109/iedm.2003.1269289
Abstract
No abstract availableKeywords
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