The vapour phase growth of GaxIn1−xP epitaxial layers
- 31 December 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 11 (3), 243-248
- https://doi.org/10.1016/0022-0248(71)90091-1
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 systemJournal of Crystal Growth, 1971
- Calculation of the In/Ga/P ternary phase diagram and its relation to liquid phase epitaxyJournal of Materials Science, 1970
- STIMULATED EMISSION IN In1 -xGaxPApplied Physics Letters, 1970
- Determining the composition of InP-GaP alloys using Vegard's LawJournal of Materials Science, 1970
- The preparation of high purity epitaxial InPSolid State Communications, 1970