Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxy

Abstract

GaAs–Al_xGa_1−xAs double‐heterostructure (DH) lasers that have current‐threshold densities at least as low as similar‐geometry DH lasers prepared by liquid‐phase epitaxy have been prepared by molecular beam epitaxy for the first time. These broad‐area lasers exhibited excellent stability and uniformity in lasing‐filament distribution across the entire junction plane and throughout the entire current injection range up to catastrophic damage. The burn‐off powers were typically about 14 W/mm. The differential quantum efficiencies were about 40%.