Intersubband absorption in the conduction band of Si/Si1−xGex multiple quantum wells
- 2 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (23), 2977-2979
- https://doi.org/10.1063/1.105817
Abstract
The intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. The measured transition energies are in good agreement with self consistent subband calculations.Keywords
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