Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2), 171-176
- https://doi.org/10.1016/0040-6090(90)90411-6
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Modulation-doped superlattices with delat layers in siliconThin Solid Films, 1990
- Resonant excitation of a layer of Si donors in GaAsSemiconductor Science and Technology, 1989
- Delta‐Doped MESFET with MBE‐Grown SiJournal of the Electrochemical Society, 1989
- Inter-sub-band absorption in GaAs/AlGaAs single quantum wellsSemiconductor Science and Technology, 1988
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- Influence of charged impurities on Si inversion-layer electronsPhysical Review B, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977
- Resonance Spectroscopy of Electronic Levels in a Surface Accumulation LayerPhysical Review Letters, 1974
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967