Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-AlxGa1−xAsHeterojunctions

Abstract

Resonance enhanced inelastic light scattering from a quasi-two-dimensional electron gas confined at the interface of abruptly doped $\mathrm{GaAs}/n-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ heterojunctions has been measured. The samples were fabricated using molecular-beam epitaxy with a high-contrast doping technique. The results show strong evidence for intersubband excitations in a two-dimensional electron system.