Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
Open Access
- 4 June 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (23), 3601-3603
- https://doi.org/10.1063/1.1374518
Abstract
Initial stages of oxidation of single-crystal, Si-faced siliconcarbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides ( SiC x O y ), while, for longer oxidation times, a mixture of SiC x O y and SiO 2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.Keywords
This publication has 16 references indexed in Scilit:
- HF chemical etching of SiO2 on 4H and 6H SiCJournal of Electronic Materials, 2000
- Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structuresApplied Physics Letters, 2000
- SiO 2 / 6H-SiC (0001)3×3 initial interface formation by Si overlayer oxidationApplied Physics Letters, 1999
- Advances in SiC materials and devices: an industrial point of viewMaterials Science and Engineering B, 1999
- Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)Applied Physics Letters, 1999
- On the correlation between the carbon content and the electrical quality of thermally grown oxides on p-type 6H–Silicon carbideApplied Physics Letters, 1998
- Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interfaceJournal of Vacuum Science & Technology A, 1997
- ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfacesJournal of Materials Research, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Oxidation of Single‐Crystal Silicon Carbide: Part I . Experimental StudiesJournal of the Electrochemical Society, 1990