Improvement in retention time of metal–ferroelectric–metal– insulator–semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer
- 30 July 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (5), 981-983
- https://doi.org/10.1063/1.1597412
Abstract
No abstract availableKeywords
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