Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4S)
- https://doi.org/10.1143/jjap.39.2125
Abstract
No abstract availableKeywords
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