Temperature dependence of MOS transistor characteristics below saturation

1 December 1966

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. ED-13 (12), 863-866
https://doi.org/10.1109/t-ed.1966.15860

Abstract

The temperature dependence of MOS transistor characteristics in the region below saturation is studied theoretically and experimentally. The variation of channel conductance with temperature is shown to be due to the variation of the threshold voltage and of the inversion layer mobility. Both variations can be predicted in reasonable agreement with experimental observations. It is shown that the role of fast surface states in determining the temperature dependence is negligible.

Keywords

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