Stimulated emission in gallium phosphide excited by two-photon optical pumping
- 1 January 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (1), 229-231
- https://doi.org/10.1063/1.322351
Abstract
The luminescence properties of GaP (Te) have been investigated under strong optical pumping by a ruby laser (two‐photon excitation) at 80 °K. Stimulated emission is observed at 5413 Å with a pumping threshold of 13 MW/cm2. Gain measurements at various intensities are also reported.Keywords
This publication has 12 references indexed in Scilit:
- Luminescence by exciton‐exciton collision in GaSePhysica Status Solidi (b), 1975
- Multiphoton transitions at the direct and indirect band gaps of gallium phosphideSolid State Communications, 1975
- Spontaneous and Stimulated Luminescence in CdS and ZnS Excited by Multiphoton Optical PumpingPhysical Review B, 1973
- Optical gain in semiconductorsJournal of Luminescence, 1973
- Analysis of indirect two-photon interband transitions and of direct three-photon transitions in semiconductorsIl Nuovo Cimento B (1971-1996), 1972
- The two-photon transition in indirect-band-gap semiconductorsJournal of Physics and Chemistry of Solids, 1972
- Indirect—Band-Gap Super-Radiant Laser in GaP Containing Isoelectronic TrapsPhysical Review Letters, 1971
- Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap-Assisted Recombination in GaAs1−xPx (x > 0.44)Applied Physics Letters, 1971
- COHERENT FLUORESCENCE FROM ZINC SULFIDE EXCITED BY TWO-PHOTON ABSORPTIONApplied Physics Letters, 1968
- Evidence for Indirect Annihilation of Free Excitons in II-VI Semiconductor LasersJournal of Applied Physics, 1967