Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap-Assisted Recombination in GaAs1−xPx (x > 0.44)
- 15 October 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (8), 256-258
- https://doi.org/10.1063/1.1653908
Abstract
Due to the short‐range nature of the N isoelectronic trap potential in GaAs1−xPx and the favorable band structure of this III–V compound, strong recombination radiation can be excited on either side of the direct‐indirect transition (x=0.44, 77°K). By means of cw excitation with an argon‐ion laser, stimulated emission is demonstrated at 77°K in N‐doped indirect GaAs1−xPx (x=0.50) operating on NN pair recombination transitions.Keywords
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