Ground state energy and optical absorption of excitonic trions in two dimensional semiconductors
- 1 January 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (4), 545-548
- https://doi.org/10.1016/0749-6036(89)90382-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Introduction to the special issue on physics and applications of semiconductor quantum-well structuresIEEE Journal of Quantum Electronics, 1986
- Binding energy for the surface biexcitonic positive ionJournal of Physics C: Solid State Physics, 1983
- Ground-state energy of aion in two-dimensional semiconductorsPhysical Review B, 1983
- Existence of charged excitons in CuClSolid State Communications, 1978
- Trions, molecules and excitons above the Mott density in GeSolid State Communications, 1977
- Observation of cyclotron resonance absorptions due to excitonic ion and excitonic molecule ion in siliconSolid State Communications, 1977
- Charged excitons in direct-gap semiconductorsPhysical Review B, 1977
- Non‐adiabatic calculation of the binding energy of the excitonic molecule ionPhysica Status Solidi (b), 1975
- Existence and Binding Energy of the Excitonic IonPhysica Status Solidi (b), 1974
- Mobile and Immobile Effective-Mass-Particle Complexes in Nonmetallic SolidsPhysical Review Letters, 1958