Saturation of impurity photoconductivity in n-GaAs with intense YAG laser light
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (5), 297-299
- https://doi.org/10.1063/1.88453
Abstract
We report the observation of saturation of impurity photoconductivity in semiconducting n‐GaAs illuminated by a Q‐switched Nd:YAG laser with light intensity up to 3.5 MW/cm2. From the saturation of conductivity we determined the concentration of defects to be ≈1016 cm−3. These form the well‐known 1.2‐eV absorption band and are presumably Ga vacancies. The curve of photoconductivity versus light intensity can be fitted with a simple model, which yields the electron recombination coefficient. The relation of the absorption band to nonlinear optical studies in GaAs at 1.06 μ is reviewed.Keywords
This publication has 11 references indexed in Scilit:
- Optical absorption on localized levels in gallium arsenidePhysical Review B, 1974
- Photocapacitance studies in high-purity GaAsPhysica Status Solidi (a), 1974
- Two-photon absorption of Nd laser radiation in GaAsApplied Physics Letters, 1973
- Observation of Two-Photon Conductivity in GaAs with Nanosecond and Picosecond Light PulsesApplied Physics Letters, 1972
- Absorption optique de l'arseniure de gallium de type n entre 0,6 et 1,3 eVPhysica Status Solidi (a), 1971
- OPTICAL LIMITING IN SEMICONDUCTORSApplied Physics Letters, 1969
- Radiative Recombination from Photoexcited Hot Carriers in GaAsPhysical Review Letters, 1969
- Laser Saturation of Photoconductivity and Determination of Imperfection Parameters in Sensitive PhotoconductorsJournal of Applied Physics, 1966
- SATURATION OF THE OPTICAL ABSORPTION IN GaAsApplied Physics Letters, 1965
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962