2-20-GHz GaAs Traveling-Wave Power Amplifier
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 32 (3), 290-295
- https://doi.org/10.1109/tmtt.1984.1132667
Abstract
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described.Keywords
This publication has 4 references indexed in Scilit:
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- A Monolithic GaAs 1-13-GHz Traveling-Wave AmplifierIEEE Transactions on Microwave Theory and Techniques, 1982
- A MESFET distributed amplifier with 2 GHz bandwidthProceedings of the IEEE, 1969
- Distributed AmplificationProceedings of the IRE, 1948