Mechanical properties of heat-treated Czochralski-grown silicon crystals
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9), 789-791
- https://doi.org/10.1063/1.92075
Abstract
Compression tests were performed on heat‐treated silicon crystals. Yield stresses of crystals depended strongly on the size and density of precipitates induced by heat treatments. Transmission electron microscope observation revealed that SiO2 precipitates larger than a few thousand angstroms became the nucleation sites of glide dislocations, causing a decrease in the yield stress, and that microprecipitates of less than several hundred angstroms acted as obstacles to dislocation movement.Keywords
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