Energy dependence of deep level introduction in electron irradiated GaAs
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (4), 2038-2042
- https://doi.org/10.1063/1.327923
Abstract
The energy dependence of the introduction rates of the E2–E5 traps which are created by electron irradiation at room temperature has been studied and found to correspond to a threshold energy for production of 10 eV. A comparison is given between these results and other published results dealing with defects introduced by irradiation at 77 K.Keywords
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