High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Top Cited Papers
- 1 December 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 50 (12), 2528-2531
- https://doi.org/10.1109/ted.2003.819248
Abstract
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.Keywords
This publication has 11 references indexed in Scilit:
- 10-W/mm AlGaN-GaN HFET with a field modulating plateIEEE Electron Device Letters, 2003
- A high-power AlGaN/GaN heterojunction field-effect transistorSolid-State Electronics, 2003
- A new generation of high voltage MOSFETs breaks the limit line of siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Practical limits of high-voltage thyristors on wide band-gap materialsJournal of Applied Physics, 2000
- High breakdown GaN HEMT with overlapping gate structureIEEE Electron Device Letters, 2000
- 7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substratesElectronics Letters, 2000
- Experimental evaluation of impact ionization coefficients in GaNIEEE Electron Device Letters, 1999
- Performance evaluation of high-power wide band-gap semiconductor rectifiersJournal of Applied Physics, 1999
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994