The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques
- 31 May 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (5), 375-380
- https://doi.org/10.1016/0038-1101(76)90073-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Surface-generation statistics and associated thermal currents in metal-oxide-semiconductor structuresPhysical Review B, 1975
- Determination of bulk trap parameters using thermal dielectric relaxation techniquesSolid-State Electronics, 1974
- Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parametersSolid-State Electronics, 1974
- Theory of transient emission current in MOS devices and the direct determination interface trap parametersSolid-State Electronics, 1974
- Thermal Bulk Emission and Generation Statistics and Associated Phenomena in Metal-Insulator-Semiconductor Devices under Non-Steady-State ConditionsPhysical Review B, 1973