Tunneling from accumulation layers in high magnetic fields

Abstract

A theoretical approach to describe tunneling from a two-dimensional electron gas in a magnetic field parallel to the current is compared with experimental data which we have obtained with $\frac{\mathrm{GaAs}}{{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}}$ heterojunctions. Excellent qualitative agreement with the calculated $I\left(B\right)\mathrm{}$ dependence is reported.