Influence of spin density in implanted Si layers on pulsed-laser annealing
- 1 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (5), 413-415
- https://doi.org/10.1063/1.91144
Abstract
In order to clarify an influence of the spin density or the optical absorption coefficient on the pulsed‐laser annealing effect, we have performed systematically ion‐backscattering and channeling analysis and ESR measurement as a funcion of spin densities in ion‐implanted Si samples. It was found that the spin density can yield a good criterion for predicting the annealing effect because the spin density is strongly correlated with the optical absorption coefficient. From spin‐density measurements, the initial absorption coefficient of the as‐implanted Si layer was found to be a very important factor which dominates the effect of laser annealing even if there is a nonlinear absorption mechanism.Keywords
This publication has 8 references indexed in Scilit:
- Dynamic behavior of pulsed-laser annealing in ion-implanted silicon: Measurement of the time dependent optical reflectancePhysics Letters A, 1979
- Elemental and dose dependent threshold for Nd-YAG laser induced recrystallization of siliconAIP Conference Proceedings, 1979
- Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layersApplied Physics Letters, 1979
- Selective annealing of ion-implanted amorphous layers by Nd3+-YAG laser irradiationApplied Physics Letters, 1978
- Dose dependence in the laser annealing of arsenic-implanted siliconApplied Physics Letters, 1978
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978