Influence of spin density in implanted Si layers on pulsed-laser annealing

Abstract

In order to clarify an influence of the spin density or the optical absorption coefficient on the pulsed‐laser annealing effect, we have performed systematically ion‐backscattering and channeling analysis and ESR measurement as a funcion of spin densities in ion‐implanted Si samples. It was found that the spin density can yield a good criterion for predicting the annealing effect because the spin density is strongly correlated with the optical absorption coefficient. From spin‐density measurements, the initial absorption coefficient of the as‐implanted Si layer was found to be a very important factor which dominates the effect of laser annealing even if there is a nonlinear absorption mechanism.