On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared
- 5 October 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (15), 151113
- https://doi.org/10.1063/1.2089170
Abstract
We demonstrate very-long-wavelength infrared type II superlattice photodiodes with a cutoff wavelength of . We observed a zero-bias, peak Johnson noise-limited detectivity of at 77 K with a 90%–10% cutoff width of 17 meV, and quantum efficiency of 30%. Variable area diode zero-bias resistance-area product measurements indicated that silicon dioxide passivation increased surface resistivity by nearly a factor of 5, over unpassivated photodiodes, and increased overall uniformity. The bulk at 77 K was found to be , with increasing more than twofold at 25 mV reverse bias.
Keywords
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