Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range

Abstract

We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered $\mathrm{InAs}∕\mathrm{GaSb}$ superlattice. Two distinct superlattices were designed with a cutoff wavelength around $5\mu \mathrm{m}$ for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around $1\mathrm{A}∕\mathrm{W}$ . Detectivity was measured around ${10}^9\mathrm{cm}{\mathrm{Hz}}^{1∕2}∕\mathrm{W}$ at room temperature and $1.5\times {10}^{13}\mathrm{cm}{\mathrm{Hz}}^{1∕2}∕\mathrm{W}$ at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier–Stark oscillations in the Zener tunneling current were observed up to room temperature.