Three-color sensor based on amorphous n-i-p-i-n layer sequence
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (10), 1763-1768
- https://doi.org/10.1109/16.464421
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Equilibrium and light-induced gap-state distribution in a-Si:HPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Experimental study of p layers in ‘‘tunnel’’ junctions for high efficiency amorphous silicon alloy multijunction solar cells and modulesApplied Physics Letters, 1994
- Nanoscale Study of the Hydrogenated Amorphous Silicon SurfaceMRS Proceedings, 1994
- Two dimensional image sensors based on amorphous silicon alloy p-i-n diodesJournal of Non-Crystalline Solids, 1993
- Optimization criteria for a-Si:H nipin color sensorsJournal of Non-Crystalline Solids, 1993
- Physics of a-Si:H p-i-n devicesJournal of Non-Crystalline Solids, 1993
- Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor SystemsMRS Proceedings, 1993
- Structural Properties of High Electronic Quality a-Si1-xCx:H by Infrared SpectroscopyMRS Proceedings, 1992
- Theory of amorphous multilayer structures (superlattices)Journal of Non-Crystalline Solids, 1985
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977