Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5B), L616
- https://doi.org/10.1143/jjap.31.l616
Abstract
We have fabricated p-type crystalline silicon/porous silicon/microcrystalline silicon carbon pn junction diodes and demonstrated current-induced visible light emission. We observed two kinds of electroluminescence; one was a weak white emission at a forward current of about 90 mA, and the other was a strong orange-red one at a forward current from about 200 to 619 mA.Keywords
This publication has 10 references indexed in Scilit:
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Efficient Visible Photoluminescence from Porous SiliconJapanese Journal of Applied Physics, 1991
- Highly conductive and wide optical band gap n-type μc-SiC prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositionApplied Physics Letters, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- An amorphous SiC thin film visible light-emitting diode with a μc-SiC:H electron injectorJournal of Non-Crystalline Solids, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990