Magnetic field-induced semimetal-to-semiconductor transition in InAs-GaSb superlattices

Abstract

With the application of a magnetic field, we have observed a semimetal‐to‐semiconductor transition in InAs‐GaSb superlattices with closely overlapped subbands of electrons and holes. The transition is manifested in a sharp increase in the magnetoresistance in the quantum limit, where the ground Landau levels associated with the subbands are crossed at the Fermi level, resulting in carrier depletion.