Extension of the Schottky barrier detector to 70 μm (4.3 THz) using submicron-dimensional contacts

Abstract

Schottky barrier diode detection in both video and mixing modes of operation has been extended to 4.252 THz (70.5 μm) using 0.5‐μm‐diam diodes fabricated from heavily doped nonepitaxial n‐type GaAs. These ultrasmall, and consequently ultralow capacitance, junctions were prepared using electron‐beam lithography and have yielded the smallest reported series‐resistance junction‐capacitance product for a Schottky barrier diode. The potential for extending diode operation to still higher frequencies is discussed.