Determination of a physical model for double diffused transistors
- 31 March 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (3), 365-375
- https://doi.org/10.1016/0038-1101(68)90048-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Determination of physical parameters of diffusion and drift transistorsIRE Transactions on Electron Devices, 1961
- Potential Distribution and Capacitance of a Graded p-n JunctionBell System Technical Journal, 1960
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953