Channeling analysis of disorder structure in neon implanted silicon
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3), 421-424
- https://doi.org/10.1016/0029-554x(78)90899-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Disorder produced by high-dose implantation in SiApplied Physics Letters, 1976
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Crystal orientation dependence of residual disorder in As−implanted SiApplied Physics Letters, 1975
- Determination of Lattice Disorder Profiles in Crystals by Nuclear BackscatteringJournal of Applied Physics, 1972