Structural and Electronic Characterization of Discharge-Produced Boron Nitride

Abstract

Insulating BN thin-films were prepared at a temperature below 300°C by the rf glow discharge decomposition of a B₂H₆+NH₃+H₂ gas mixture. The structure of the deposited films was amorphous and the optical bandgap was determined to be ∼5.0 eV. Utilizing the plasma-deposited BN films, Al/BN/Si MIS structures were fabricated to test the dielectric properties. The static dielectric constant of stoichiometric BN is found to be 6.5, and the breakdown-field strength exceeds 3×10⁶ V/cm.