High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (1), 56-58
- https://doi.org/10.1109/68.47042
Abstract
An InGaAs metal-semiconductor-metal (MSM) photodetector with an Fe-doped InP Schottky barrier enhancement layer is described. With 5-V bias, the detector has negligible low-frequency gain, a low dark current of 200 nA, a responsivity of 0.3 A/W, and an impulse response with a 1/e fall time of 65 ps, corresponding to a 3 dB bandwidth of 2.5 GHz. The device layer structure is a very attractive candidate for integration with high-performance InGaAs/InP FETs.<>Keywords
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