Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (1), 59-62
- https://doi.org/10.1109/68.47043
Abstract
The first monolithic integration of a metal-semiconductor-metal (MSM) InGaAs photodetector with a field-effect transistor (FET) and resistors into a high-impedance front-end photoreceiver circuit is discussed. The sample was grown in a single step by chemical beam epitaxy, and standard processing steps for making FETs were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector, and the electrical isolation layer between the photodetector and the electronic circuit. A bit error rate of less than 10/sup -9/ at 200 Mb/s has been achieved with this preliminary circuit for an optical power of -17 dBm.<>Keywords
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